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Shindengen is an overall manufacturer of power electronics that develops and produces power semiconductors, electrical products, power device products and new energy products. Chip One Stop allows you to make small-lot purchases of highly efficient and high performing power semiconductors and power device products.

Power module

Features

Small DIP package
Insulation type
High withstand voltage
High heat dissipation

Usage

General purpose inverter
Servo Amplifier

Industrial equipment Power module for motor drive

The power module is a product that combines multiple power semiconductors into one package.
By integrating the parts of the power circuit, it comtributes to miniaturization of electronic equipment and improvement of productivity during manufacturing.
We will be considering package selection and commercialization according o customer`s circuit and packaging methods and expanding our lineup.

External view

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Electrode diagram

Rating table

Absolute maximum ratings

Converter diode
Item	Symbol	Conditions	Product name		Unit
Item	Symbol	Conditions	MG020200	MG020201	Unit
Junction temperature	Tj		150	150	℃
Peak inverse voltage	VRM		600	600	V
Non-repetition peak surge reverse voltage	VRSM		800	800	V
Frequency	IO	50 Hz sine wave, resistive load, Tc = 137℃ (MG 020200), 136℃ (MG 020201)	20	30	A
Brake IGBT
Item	Symbol	Conditions	Product name		Unit
Item	Symbol	Conditions	MG020200	MG020201	Unit
Channel temperature	Tch		150	150	℃
Collector/emitter voltage	VCES		600	600	V
Gate/emitter voltage	VGES		±20	±20	V
Collector current (DC)	IC		28	30	A
Collector current (peak)	ICP	Pulse width 10μs、duty ＝ 1/100	56	60	A
Total loss	PT		113	178	W
Brake diode
Item	Symbol	Conditions	Product name		Unit
Item	Symbol	Conditions	MG020200	MG020201	Unit
Junction temperature	Tj		150	150	℃
Peak inverse voltage	VRM		600	600	V
Frequency	IO	50 Hz sine wave, resistive load, Tc = 137℃	3	3	A
Module
Item	Symbol	Conditions	Product name		Unit
Item	Symbol	Conditions	MG020200	MG020201	Unit
Storage temperature	Tstg		-40 ～ 125	-40 ～ 125	℃
Withstand voltage	Vdis	Batch terminal/between cases AC1 Application in minutes	2.5	2.5	kV
Tightening torque	TOR	Main terminal/for mounting (recommended value 0.8N/m)	1.5	1.5	N・m

Electrical/thermal characteristics

Converter diode
Item	Symbol	Conditions			Product name		Unit
Item	Symbol	Conditions			MG020200	MG020201	Unit
Forward voltage	VF	TF ＝ 7A（MG020200）、10A（MG020201）　Pulse measurement per element			1.05	1.05	V（max）
Reverse current	IR	VR ＝ 600V　Pulse measurement per element			10	10	μA（max）
Brake IGBT
Item	Symbol	Conditions			Product name		Unit
Item	Symbol	Conditions			MG020200	MG020201	Unit
Between collector and emitter ON voltage	VCE（sat）	IC ＝ 15A、VGE ＝ 15V			2.1	2.0	V（typ）
Gate threshold voltage	VTH	IC ＝ 1mA、VCF ＝ 10V			6.5	6.5	V（typ）
Total gate charge amount	Qg	VCC ＝ 400V、VGE ＝ 10V、IC ＝Rated value			38	62	nC（typ）
Input capacity	Cies	VCE ＝ 10V（MG020200）、25V（MG020201）、VGE ＝ 0V、f ＝ 1MHz			1050	1670	pF（typ）
Feedback capacitance	Cres				29	20
Output capacity	Coes				185	165
Brake diode
Item	Symbol	Conditions			Product name		Unit
Item	Symbol	Conditions			MG020200	MG020201	Unit
Forward voltage	VF	IF ＝ 3A、Pulse measurement			1.65	1.65	V（max）
Reverse current	IR	VR ＝ 600V、Pulse measurement			10	10	μA（max）
Reverse recovery time	trr	IF ＝ 0.5A、IR ＝ 1.0A、0.25IR			50	50	ns（max）
Module
Item	Symbol	Conditions			Product name		Unit
Item	Symbol	Conditions			MG020200	MG020201	Unit
Thermal resistance	θjc	Between junction and case	Converter	Diode	0.28	0.2	℃ /W（max）
			Brake	IGBT	1.1	0.7	℃ /W（max）
			Brake	Diode	2.4	2.4	℃ /W（max）

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