东芝存储器株式会社第四代BiCS FLASH™层数增加，存储容量提高

 

2017年06月28日

 

东京--存储器解决方案全球领导者东芝存储器株式会社今日宣布，公司已开发出采用堆叠式结构[1]的96层BiCS FLASH™三维（3D）闪存的原型样品，该产品采用三位元（三阶存储单元，TLC）技术。该96层新产品为256千兆比特（32GB）设备，其样品预计将于2017年下半年发布，批量生产计划于2018年启动。该新产品满足企业级和消费级SSD、智能手机、平板电脑和存储卡等应用的市场需求和性能规范。

未来，东芝存储器株式会社将在不久的将来在其512千兆比特（64GB）等较大容量产品中应用其新的96层工艺技术和4位元（四阶存储单元，QLC）技术。
 

创新的96层层叠工艺结合了先进的电路和制造工艺技术，与64层层叠工艺相比，其每单元芯片尺寸存储容量增加约40%。该工艺降低了位存储价格并提高了每个硅晶片存储容量的可制造性。
 

S自2007年宣布推出全球首款[2]3D闪存技术原型以来，东芝存储器株式会社不断推动3D闪存的发展并积极推广BiCS FLASH™技术，以满足市场对更小裸芯片面积 、更大容量闪存的需求。
该96层BiCS FLASH™将在四日市生产基地5号晶圆厂（Fab 5）、2号新晶圆厂（Fab 2）和将于2018夏季开业的6号晶圆厂（Fab 6）生产。
 

注：

1. 一种在硅基板上垂直堆叠闪存存储单元的结构，相比平面NAND闪存（存储单元位于硅基板上），其极大地提高了密度。

2. 数据来源：东芝存储器株式会社，截至2007年6月12日。
 

* 本文提及的公司名称、产品名称和服务名称可能均为其各自公司的商标。
 

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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