CGD15SG00D2
- Reference Design
1.General Description
CGD15SG00D2, Reference design is to demonstrate the design of an isolated gate driver tailored for 3rd Generation (C3M) Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistor (MOSFET)
2.CGD15SG00D2 features
- • Creepage enhancing groove between the logic side and the power side of the printed circuit board (PCB)
- • 2W isolated power supply that enables the operation of larger MOSFETs at higher frequencies
- • 5000VAC isolation rated optocoupler
- • Separate gate turn-on and gate turn-off resistors with a dedicated diode which allow user friendly optimization of both turn-on and turn-off signals
- • Common mode inductor on logic power input for enhanced electro-magnetic interference (EMI) immunity
- • 9mm creepage enhancing slot between primary and secondary circuits
3. Block diagram of Cree’s CGD15SG00D2 gate driver board
The block diagram of Cree’s CGD15SG00D2 gate driver board for Cree’s generation 3 SiC MOSFET
is illustrated in Figure 4.
| Manufacturer | Categories | Application |
|---|---|---|
Cree LED |
Power Management (PMIC) |
BOM Information
