July 22, 2013

 

Reduces On-Resistance by approximately 24%

 

TOKYO – Toshiba Corporation (TOKYO: 6502) today announced that it has launched a new series of high voltage MOSFETs, "πMOS Ⅷ" series, and introduced "TK9J90E" as the initial product of the series. Mass production is scheduled to start in August, 2013.

Optimization of chip design reduces Ron·A (on resistance per area) by approximately 24% compared to a product[1] with an equivalent voltage. Reduction of Qg (gate charge) performance by approximately 24% improves turn off time (toff) by approximately 28%.

 

Main specifications

 

[1] Compared to "2SK3878".

Follow this link for more on this product.

http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1324090_37649.html?mm=cp0722&no=03

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0722&no=04

 

 

 

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企业HP：
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0722&no=04

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