IGW40N120H3FKSA1 Infineon Technologies IGBT分立 - 商品詳細情報
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製品仕様
製品説明
- *Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
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* Low switching losses for high efficiency
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* Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
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* Fast switching behavior with low EMI emissions
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* Optimized diode for target applications, meaning further improvement in switching losses
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* Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
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* Short circuit capability
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* Offering T j(max) of 175°C
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* Packaged with and without freewheeling diode for increased design freedom
製品情報
