2016年7月27日

新一代东芝BiCS FLASH™增加了层数，扩大了容量
东京-东芝公司（东京：6502）今天宣布最新一代BiCS FLASHTM三维（3D）闪存存储器，采用了堆栈式单元结构[1]。该款64层工艺的存储器于今天成为了世界首款[2]样品出货的产品。新型存储器采用3-bit-per-cell（1个存储器储存单元可存放3比特的数据）技术，实现了256Gbit（32GB）的容量。这种进步印证了东芝专有架构的潜力。东芝将不断精进BiCS FLASHTM制造工艺，其发展蓝图中的下一个里程碑将是同样采用64层堆栈的512Gbit（64GB）容量存储器。

这款新型存储器沿袭48层BiCS FLASHTM，并采用领先的64层堆叠工艺，使每个单元芯片的容量比48层堆叠工艺增加40%，在降低每比特成本的同时提高每个硅晶圆的存储容量的可加工性。64层BiCS FLASHTM满足严格的性能规范，将用于包括企业级SSD和消费级SSD、智能手机、台式电脑和存储卡等存储相关应用。

东芝自2007年6月发布世界首款3D[3] NAND闪存存储技术原型以来，一直致力于积极推进BiCS FLASHTM发展，以满足市场对于更小尺寸且更大容量的存储需求。

东芝已于本月初在日本四日市的Fab2新厂生产该新型64层BiCS FLASHTM，并计划于2017年上半年开始量产。

注：
[1] 栈式结构闪存存储器单元垂直于硅基板，大大提高了密度，并超过二维NAND闪存存储器，单元在硅基板上形式。
[2] 截至至2016年7月，东芝调查
[3] 东芝提出，2017年6月12日
*BiCS FLASH是东芝公司的商标。

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞http://toshiba.semicon-storage.com/cn/?mm=cp160728&no=01

 

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