- Four new devices boost efficiency and power density of industrial equipment -

May 20, 2025

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched  four 650V silicon carbide (SiC) MOSFETs, equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in a compact DFN8×8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.

The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8×8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance[2] components smaller than those of lead-inserted packages, reducing switching losses. DFN8×8 is a 4-pin[3] package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25%[4] compared to current Toshiba products[5], helping to reduce power loss in equipment.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

Notes:

[1] As of May 2025.

[2] Resistance, inductance, etc.

[3] A product with a signal-source pin connected close to the FET chip.

[4] As of May 2025, values measured by Toshiba.

[5] A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection.

Applications

Switched mode power supplies in servers, data centers, communications equipment, etc.

EV charging stations

Photovoltaic inverters

Uninterruptible power supplies

 

Features

DFN8×8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.

Toshiba’s 3rd generation SiC MOSFETs

Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio

Low drain-source On-resistance×gate-drain charges

Low diode forward voltage: VDSF=-1.35V(typ.) (VGS=-5V)

Follow the link below for more on the new product.

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*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.