2017年3月31日

提供增强型保护功能，减少封装空间
 

东京—东芝公司（TOKYO：6502）旗下存储与电子元器件解决方案公司今日宣布推出新系列多通道低电容瞬态抑制（TVS）二极管[1]，该二极管用于为高速接口提供防静电放电（ESD）和防浪涌电压保护。新系列包含四款适用于USB Type-C™和HDMI™接口的产品，可用于智能手机、可穿戴设备和平板电脑等移动设备。该系列瞬态抑制二极管在提供增强型保护性能的同时，支持更低动态电阻和钳位电压。四款产品均采用小型LGA封装[2]，封装空间比东芝现有产品[3]减少约30%。
 

随着智能手机、可穿戴设备、平板电脑、笔记本电脑、办公设备和液晶面板等电子设备不断小型化并提供日益增强的高性能特性，这些电子设备所使用的半导体产品也日益小型化。因此，市场越来越需要为半导体提供防静电放电和防浪涌电压保护的设备。而且，当用来保护USB Type-C、HDMI和其他高速接口时，低电容产品还可防止传输信号的衰减。

东芝新系列瞬态抑制二极管产品具有旨在为尖端电子设备的高速接口提供保护的特性和端子布局。其采用东芝专有的EAP-IV工艺[4]制造，与东芝现有产品[5]相比，实现更低的动态电阻和钳位电压，同时通过减少静电放电和浪涌电压对后期设备的影响来提高整体保护。该系列二极管采用小尺寸LGA型封装，封装空间比东芝现有产品[3]减少约30%。该新系列为3.3V和5.0V信号线提供4位和2位产品，方便用户选择与其系统的接口电压相匹配的产品。

产品系列和主要规格

 

[1] 瞬态抑制二极管（静电放电保护二极管）

[2] 4位产品“DF5G5M4N”和“DF5G6M4N”采用1.3 x 0.8mm“DFN5”封装，而2位产品“DF6D5M4N”和“DF6D6M4N”采用1.25 x 1.0mm“DFN6”封装。

[3] 东芝1位产品

[4] 东芝原创的ESD阵列工艺IV

[5] 与东芝4位产品“DF5G7M2N”相比，动态电阻降低约20%。

[6] （IEC61000-4-2）（触点）

[7] TLP参数：Z0=50Ω，tp=100ns，tr=300ps，平均窗口：t1=30ns至t2=60ns

*USB Type-C是USB实施者论坛的商标或注册商标。
*HDMI是HDMI Licensing，LLC的商标或注册商标。

有关新产品和东芝瞬态抑制二极管的更多信息，请访问如下链接：

https://toshiba.semicon-storage.com/cn/product/diode/esd-protection-diode.html?mm=cp170407&no=01

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

http://toshiba.semicon-storage.com/cn/?mm=cp170407&no=02

 

 

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Companies Website:
http://toshiba.semicon-storage.com/cn/?mm=cp170407&no=02

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