ON Semiconductor Introduces High Performance Field Stop IGBTs for High Efficiency Power Conversion
2012/07/25ON Semiconductor
电源/电力
New 1200 volt devices offer optimal solution for high power inductive heating and inverter applications
Power Conversion Intelligent Motion (PCIM), NUREMBERG, Germany – May 9, 2012 - ON Semiconductor (Nasdaq: ONNN), a leading global supplier of high performance, energy efficient, silicon solutions, introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products. The NGTB15N120, NGBT20N120 and NGBT25N120 enable high performance power conversion solutions for a wide range of demanding applications, including induction cook tops, rice cookers and other small kitchen appliances.
Increasing energy prices and environmental concerns around carbon emissions are continuously driving demand for higher performance power discrete components; especially in high power inductive and inverter applications. These new 1200 volt (V) rated IGBTs utilize deep trench technology and state-of-the-art wafer thinning and processing techniques to enable very low turn-off losses while maintaining a low “ON” state voltage during turn-on, which results in lower switching and conduction losses. These devices are offered with a choice of 15 ampere (A), 20 A and 25 A current ratings and are co-packaged with a very low forward drop and soft-recovery fast rectifier to meet stringent customer requirements for high efficiency while providing a space efficient complete solution.
“ON Semiconductor has been a market leader in delivering high performance and reliable IGBTs to the automotive segment for more than a decade,” said John Trice, senior director and general manager for ON Semiconductor’s Power Discrete Division. “The new 1200 V series of high performance IGBTs leverages our intellectual property and competencies in high voltage trench and wafer processing technologies while providing customers in a broad range of market sectors with a high quality and robust solution for their demanding power applications”.
Packaging & Pricing
The TO-247 packaged Field Stop IGBT devices save board space and are optimized for very low on-state voltage drop and turn-off switching losses. The NGTB15N120IHLWG, NGTB20N120IHLWG, and NGTB25N120IHLWG inductive heating specific IGBTs are priced at USD1.50, USD1.80, and USD2.00 per unit respectively, all in quantities of 2,500. The NGTB15N120LWG, NGTB20N120LWG, and NGTB25N120LWG motor drive specific IGBTs are priced at USD1.75, USD2.10, and USD2.35 respectively, all in quantities of 2,500.
1200 V NGBT series devices offer optimal solution for high power inductive and inverter applications
PCIM - ON Semiconductor Booth - Hall 12, Stand #371 –
ON Semiconductor will be featuring a range of live product presentation for power modules and discrete IGBTs for induction heating, efficient motor drive and solar inverters at PCIM from May 8-10 at Stand #371 in Hall 12 of the Exhibition Centre Nuremberg.
About ON Semiconductor
ON Semiconductor (Nasdaq: ONNN) is a premier supplier of high performance, energy efficient, silicon solutions for green electronics. The company's broad portfolio of power and signal management, logic, discrete and custom devices helps customers efficiently solve their design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power applications. ON Semiconductor operates a world-class, value-added supply chain and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions. For more information, visit http://www.onsemi.com.
ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its Web site in this news release, such information on the Web site is not to be incorporated herein.
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