June 18, 2013

Realize top class[Note 1] low ON-resistance performance and high-speed switching

TOKYO – Toshiba Corporation (TOKYO: 6502) today announced the introduction of a 30V voltage power MOSFET line-up for general-purpose DC-DC converters used in base stations and servers. The products use the latest 8th generation low-voltage trench structure and achieve the highest class[Note 1] of low ON-resistance and high-speed switching. Mass production is scheduled to start at the end of June.

Features
■Uses the 8th generation low-voltage trench structure and achieves top class[Note 1] low ON-resistance

■Achieves low internal gate resistance and a low gate capacity ratio (Cgd/Cgs), which contributes to prevention of the self turn-on phenomenon

 

 Note 1: Source: Toshiba Corporation, June 18, 2013.

 

Follow this link for more on this product.

http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1323894_37649.html?mm=cp0618&no=03

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0618&no=04

 

 

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企业HP：
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0618&no=04

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