Realizes Top Class[1] Low On Resistance Performance

 

July 18, 2013

 

TOKYO – Toshiba Corporation (TOKYO: 6502) today announced that it has launched the 4th generation of its system super junction MOSFETs, the "DTMOS Ⅳ" series of 650V devices. The "TK14A65W" has been launched as the initial product in the series and full-scale mass production is scheduled to start in August, 2013.

 

Using the latest single epitaxial process, the series reduces the Ron·A (on resistance per area) by approximately 50%[2] compared to existing 650V "DTMOS Ⅱ" series. This allows a line-up of small packages, contributing improved power efficiency and downsizing of products into which they are integrated.

 

 

Main specifications

Notes:
[1] As of July, 2013. Research by Toshiba Corporation.
[2] Compared to "TK17A65U"

 

 

For more information about the product, please see the product page
http://www.semicon.toshiba.co.jp/eng/product/new_products/transistor/1324030_37649.html?mm=cp0719&no=03

 

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior noti

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0719&no=04

 

 

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http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp0719&no=04

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