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Bourns Releases New High Power TVS Diodes in SMD PackageModel PTVS10-058C-SH and PTVS10-076C-SH

2014/05/22Bourns  模拟

Riverside, California - April 29, 2014 - Bourns is pleased to announce the release of Models PTVS10-058C-SH and PTVS10-076C-SH high current bidirectional TVS diodes, designed for use in high power DC bus clamping applications.

These devices offer bidirectional port protection meeting IEC 61000-4-5 8/20 µs current surge requirements and are RoHS compliant*. When compared to typical competing MOV technology, the use of silicon technology in the Power TVS products provides a lower clamping voltage under surge, greater performance stability and increased reliability.

The SMD package provides a 20 % reduction in peak clamping voltage compared to the equivalent through-hole device because of its lower lead inductance. The result is reduced electrical stress on the protected circuitry. In addition, assembly should be simplifi ed and costs can be reduced by eliminating the extra design step in cases where the Power TVS diode is the only through-hole component on the printed circuit board.

These devices exhibit an excellent surge response versus temperature; the typical maximum surge current at 150 °C exceeds 70 % of their rated value at 25 °C.


Features
■ 58 V or 76 V standoff voltage
■ Very high surge current protection
 (10 kA @ 25 °C)
■ Excellent surge performance vs. temperature
■ RoHS compliant*

Applications
■ Exposed AC/DC power supplies 
 (in wireless base stations, etc.)



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