May 30, 2014

 

TOKYO— Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) with the addition of insulated TO-220F-2L package products. The 4 new products expand the 6A, 8A, 10A and 12A line-up from the current TO-220-2L package products. Mass production shipment starts from today.

 

SBDs are suited for applications including server power supplies and power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient (Toshiba survey).

 

SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters.

Key Specifications of the New Products

 

Current Line-up

 

Follow this link for more on Toshiba SiC schottky barrier diodes.

http://www.semicon.toshiba.co.jp/eng/product/diode/sic/index.html?mm=cp140530&no=03

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

 

http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp140530&no=04

 

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企业HP：
http://www.semicon.toshiba.co.jp/eng/index.html?mm=cp140530&no=04

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