AT45DB641E-MWHN-Y Renesas Electronics 其他存储器 - 商品詳細情報
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AT45DB641E-MWHN-Y
AT45DB641E-MWHN-Y
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ECCN
: 3A991b.1.a.
HTSN : 8542320071
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规格
- 制造商名称
- Renesas Electronics
- 制品名
- AT45DB641E-MWHN-Y
- 制品分类
- 其他存储器
- RoHS
- 符合RoHS标准
- 速度
- 85MHz
- Deep Power Down
- 0.4
- Flash by Task
- Datalogging
- Flexible Read/Write Buffer
- Yes
- Key Benefit
- Includes controllable SRAM
- Memory Class
- DataFlash
- Memory Density
- 64Mbit
- Mounting Type
- Surface Mount
- Operating Voltage Range
- 1.7 to 3.6V
- Read Current
- 7
- Read Modify Write
- Yes
- Supply Voltage Vcc
- 1.7 to 3.6V
- Supply Voltage Vcc Range
- 1.7 to 3.6V
- 动作温度范围
- -40 to 85C
- 尺寸
- 6X8mm
- 接口
- SPI
- 类别2
- SPI NOR Flash
- 类型
- DFN
- 间距
- 0.5
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