October 27, 2014

 

TOKYO – Toshiba Corporation's (TOKYO: 6502) Semiconductor & Storage Products Company today announced the launch of "TPD7104F", a 1-channel high-side N-channel power MOSFET gate driver. The new product is an all-in-one circuit for charge pumps and can be operated at a lower voltage compared to Toshiba conventional products[1], at VDD(opr) = 5 to 18V. Shipment starts from today.

 

■Key Specifications of the New Product

 

・Key Specifications of the New Product

 

・Supply voltage: VDD(opr)=5 to 18V

 

・Built-in overcurrent protection functions

 

・Built-in overcurrent diagnostic functions

 

・Output voltage
VOUT=VDD+8V(Min)@VDD=5V, IOUT=-100µA, Tj=-40 to 125°C
VOUT=VDD+10V(Min)@VDD=8 to 18V, IOUT=-100µA, Tj=-40 to 125°C

 

・Small package: PS-8(2.8mm×2.9mm)

 

■Applications

 

Automotive applications for driving high-side N-channel MOSFETs used in 12V batteries, including semiconductor relays and semiconductor load switches for idle stop systems and electric power steering (EPS).

 

Note:

 

Comparison with "TPD7102F" (VDD=7 to 18V)

 

Follow this link for more on Toshiba MOSFETs.

 

http://toshiba.semicon-storage.com/ap-en/product/mosfet.html?mm=cp141028&no=03　

 

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

 

 

 

 

Toshiba Corporation- Semiconductor and Storage Products Company　Website＞

 

http://toshiba.semicon-storage.com/ap-en?mm=cp141028&no=04　

 

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企业HP：
http://toshiba.semicon-storage.com/ap-en?mm=cp141028&no=04

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