ON Semiconductor and Transphorm Introduce 600 V GaN Transistors for Compact Power Supplies and Adapters

新闻中心

ON Semiconductor and Transphorm Introduce 600 V GaN Transistors for Compact Power Supplies and Adapters

2015/05/19ON Semiconductor 电源/电力

Reference design enables evaluation and implementation of new GaN-based transistors and AC/DC controllers required to take full advantage of the technical benefits of GaN devices

Applied Power Electronics Conference (APEC) – Booth 407 – CHARLOTTE, NC – March 16, 2015 – ON Semiconductor (Nasdaq: ONNN), driving energy efficient innovations, and power conversion specialist Transphorm, building on their previously announced partnership to bring gallium nitride (GaN) based power solutions to market, today announced the introduction of the co-branded NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) 600 V GaN cascode transistors and a 240 W reference design that utilizes them.

“GaN transistors offer a performance leap for switching power supplies and other applications where efficiency and power density are critical,” said Paul Leonard, vice president and general manager of the ON Semiconductor power discrete division. “As more engineers become familiar with the benefits of gallium nitride devices, the demand for GaN-based products will rapidly increase. ON Semiconductor and Transphorm are working to be at the forefront of new development and accelerate widespread adoption in the marketplace.”

With typical on-resistances of 290 and 150 mΩ, the two new products, NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) are offered in an optimized TO-220 package for easy integration with customers’ existing circuit board manufacturing capabilities. Both of the 600 V products have been qualified using JEDEC standards and are in mass production.

The NCP1397GANGEVB (TDPS250E2D2) evaluation board is offered as a complete reference design for customers to implement and evaluate GaN cascode transistors in their power designs. The evaluation board offers customers a smaller footprint and better efficiency than power supplies using traditional devices. The boost stage delivers 98 percent efficiency and utilizes the NCP1654 power factor correction controller. The LLC DC-DC stage uses NCP1397 resonant mode controller to offer 97 percent full load efficiency. This performance is achieved while running at 200+ kHz and – impressively – is also able to meet EN55022 Class B EMC performance. Full documentation is available at the ON Semiconductor web site.

Visit ON Semiconductor at APEC 2015 –Booth 407 (Transphorm – Booth 1317) to see demonstrations on the GaN devices along with a new current mode LLC power supply and automotive motor driver.

Visit Chip1Stop Chinese site
Visit Chip1Stop Korean site
Visit Chip1Stop English site
Visit Chip1Stop German site

企业HP：
http://www.onsemi.jp/

ON Semiconductor点击这里购买产品里

ON Semiconductor新闻发布

ON Semiconductor’s BelaSigna® R281 Enables Voice Activation in Portable Devices
2015/11/19ON Semiconductor 模拟
ON Semiconductor’s 2-in-1 Battery Protection IC Named a “Top 10 Power Product” in China
2015/10/14ON Semiconductor 电源/电力
ON Semiconductor Demonstrates New Qualcomm Quick Charge 3.0 Compliant Charger
2015/10/14ON Semiconductor 电源/电力
ON Semiconductor’s Latest BSI Technology Delivers Best-in-Class Performance for Automotive ADAS and Viewing Cameras
2015/08/14ON Semiconductor 汽车
ON Semiconductor Becomes a Member of Thread Group
2015/06/17ON Semiconductor 企业/市场走向

・型番が特定できている場合に便利な検索

・型番が特定できていない場合（スペック等は決まっている）に便利な検索

新闻中心