IGB30N60H3ATMA1 Infineon Technologies IGBT分立 - 商品詳細情報
加工依頼
规格
- 制造商名称
- Infineon Technologies
- 制品名
- IGB30N60H3ATMA1
- 制品分类
- IGBT分立
- 生命周期状态
- 量产中
- RoHS
- RoHS対応
- コレクタエミッタ電圧
- 600V
- コレクタ電流
- 60A
- パッケージ
- TO-263-3 D2Pak TO-263AB
- IGBTタイプ
- FST
- 入力タイプ
- 標準
- その他の型番/品番
- IGB30N60H3-ND | 2156-IGB30N60H3ATMA1TR | IGB30N60H3CT | IGB30N60H3TR-ND | IGB30N60H3ATMA1CT | IGB30N60H3 | IGB30N60H3ATMA1DKR | IGB30N60H3DKR-ND | IGB30N60H3CT-ND | IGB30N60H3DKR | IGB30N60H3ATMA1TR | SP000852240
- 動作温度範囲
- -40 to 175C
- 定格電力
- 187W
- 原厂包装
- Tape & Reel
- 制造商数量
- 1000
如果产品信息中有错误，请在此处指出。
产品说明
- *Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
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* Low switching losses for high efficiency
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* Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
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* Fast switching behavior with low EMI emissions
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* Optimized diode for target applications, meaning further improvement in switching losses
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* Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
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* Short circuit capability
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* Offering T j(max) of 175°C
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* Packaged with and without freewheeling diode for increased design freedom
产品文档
