2021/05/31 |
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PCN(製品仕様変更通知書)
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Package Enhancement to Store SMT MOSFETs and Schottky Diodes : Packed in Tube inside Vacuum-Sealed Moisture Barrier Bags (MBBs) for Climate Protection surface-mount TO-252 and TO-263 type components in tube |
2022/07/01 |
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PCN(製品仕様変更通知書)
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Manufacturing of Discrete Schottky Diodes on 200-mm Wafers at the Mohawk Valley Fabrication (MVF) Facility
Description of the Change Wolfspeed’s discrete silicon carbide (SiC) Schottky diodes are currently manufactured on 150-mm wafers at Wolfspeed’s fabrication facilities in RTP and Durham, North Carolina, USA. To increase its production capacity,Wolfspeed will utilize its state-of-the art 200-mm wafer Mohawk Valley Fabrication (MVF) facility in New York.
Volume Production Date Beginning July 2022 |
2022/07/01 |
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PCN(製品仕様変更通知書)
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Manufacturing of Discrete MOSFETs on 200-mm Wafers at the Mohawk Valley Fabrication (MVF) Facility
Description of the Change Wolfspeed’s discrete silicon carbide (SiC) MOSFETs are currently manufactured on 150-mm wafers at Wolfspeed’s fabrication facilities in RTP and Durham, North Carolina, USA. To increase its production capacity, Wolfspeed will utilize its state-of-the art 200-mm wafer Mohawk Valley Fabrication (MVF) facility in New York.
Volume Production Date Beginning July 2022 |
2023/10/24 |
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PCN(製品仕様変更通知書)
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Change in Discrete Products from Cree Logo to Wolfspeed Logo Projected First Ship Date for Products with the Wolfspeed Logo 10/23/2023 |
2024/10/07 |
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PCN(製品仕様変更通知書)
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Wolfspeed is in the process of shifting all its chip fabrication from the North Carolina Fabrication (NCF) facility to the state-of-the art 200-mm wafer Mohawk Valley Fabrication (MVF) facility in New York.
Last Date to Submit an Order for NCF Products : December 31, 2024 |