2021/05/11 |
|
PCN(製品仕様変更通知書)
|
Expansion of 150-mm Wafer Manufacturing for All Packaged C3M 1200 V 16 mΩ, 21 mΩ, 32 mΩ, 40 mΩ, 75 mΩ, 160 mΩ, and 350 mΩ SiC MOSFETs at Cree’s Durham (DUR) Facility |
2021/05/31 |
|
PCN(製品仕様変更通知書)
|
Package Enhancement to Store SMT MOSFETs and Schottky Diodes : Packed in Tube inside Vacuum-Sealed Moisture Barrier Bags (MBBs) for Climate Protection surface-mount TO-252 and TO-263 type components in tube |
2021/06/11 |
|
PCN(製品仕様変更通知書)
|
Wolfspeed’s C3M 1200 V SiC MOSFETs are currently manufactured on 150-mm diameter wafers at Wolfspeed’s fabrication facility in Research Triangle Park (RTP), North Carolina, USA. The production line is now being expanded to utilize Wolfspeed’s capacity at its fabrication facility in Durham (DUR), North Carolina, USA. All tools and processes of both facilities are qualified through the internal Process Change Review Board (PCRB). The schedule has been updated for the following 4 model numbers. C3M0160120D, C3M0160120J, C3M0350120D, C3M0350120J |
2022/07/01 |
|
PCN(製品仕様変更通知書)
|
Manufacturing of Discrete MOSFETs on 200-mm Wafers at the Mohawk Valley Fabrication (MVF) Facility
Description of the Change Wolfspeed’s discrete silicon carbide (SiC) MOSFETs are currently manufactured on 150-mm wafers at Wolfspeed’s fabrication facilities in RTP and Durham, North Carolina, USA. To increase its production capacity, Wolfspeed will utilize its state-of-the art 200-mm wafer Mohawk Valley Fabrication (MVF) facility in New York.
Volume Production Date Beginning July 2022 |
2023/10/24 |
|
PCN(製品仕様変更通知書)
|
Change in Discrete Products from Cree Logo to Wolfspeed Logo Projected First Ship Date for Products with the Wolfspeed Logo 10/23/2023 |
2024/12/24 |
|
PCN(製品仕様変更通知書)
|
Manufacturing of Discrete MOSFETs (C3M) on 200-mm Wafers at the Mohawk Valley Fabrication (MVF) Facility |