AUIRFB8409 Infineon Technologies MOSFET - 商品詳細情報
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AUIRFB8409
AUIRFB8409
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Lifecycle Status : NRND
ECCN
: EAR99
HTSN : 8541290095
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Data sheet
Design/Simulation Data
Other Documents
Data Sheet | |
---|---|
Datasheet | EN_Infineon Technologies_Datasheet_20230223012739627 |
Specifications
- Manufacturer name
- Infineon Technologies
- Product name
- AUIRFB8409
- Product classification
- MOSFET
- Lifecycle Status
- NRND
- RoHS
- RoHS
- Series name
- HEXFET(R)
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-220-3
- Drain to Source voltage
- 40V
- Continuous drain current
- 195A
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 1.3mOhm
- Vgs(th)
- 3.9 V
- Gate Charge (Qg)
- 450nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 14240pF
- Power consumption
- 375W
- Operating temperature range
- -55 to 175C
- Other names
- SP001521544 | 2156-AUIRFB8409 | IRAUIRFB8409 | INFIRFAUIRFB8409
- Type
- Power MOSFET
- Manufacturer Packaging
- Tube
- Manufacturer packaging quantity
- 1000
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